SI4401BDY-T1-GE3Vishay Siliconix
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    SI4401BDY-T1-GE3123
    • Manufacturer No：
      SI4401BDY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      235008
    • Description：
      power mosfet 40V 20V-TRANSISTOR FET N-CH
    • Quantity：
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    • Qty Unit Price price
    • 1 $1.948 $1.948
    • 10 $1.928 $19.28
    • 100 $1.908 $190.8
    • 1000 $1.889 $1889

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    SI4401BDY-T1-GE3
    • Manufacturer No：
      SI4401BDY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4401BDY-T1-GE3
    • SKU：
      235008
    • Description：
      power mosfet 40V 20V-TRANSISTOR FET N-CH

    User Guide

    User Guide

    SI4401BDY-T1-GE3 Details

    power mosfet 40V 20V-TRANSISTOR FET N-CH

    SI4401BDY-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Width: 4mm
    • Operating Temperature: -55°C~150°C TJ
    • Height: 1.75mm
    • Power Dissipation: 1.5W
    • Vgs (Max): ±20V
    • Fall Time (Typ): 15 ns
    • FET Type: P-Channel
    • Turn On Delay Time: 16 ns
    • Resistance: 14mOhm
    • Threshold Voltage: -1V
    • Power Dissipation-Max: 1.5W Ta
    • Current - Continuous Drain (Id) @ 25°C: 8.7A Ta
    • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Published: 2015
    • Max Junction Temperature (Tj): 150°C
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Voltage (Vdss): 40V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Rise Time: 15 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Drain to Source Breakdown Voltage: -40V
    • Weight: 186.993455mg
    • Turn-Off Delay Time: 97 ns
    • Continuous Drain Current (ID): -10.5A
    • Rds On (Max) @ Id, Vgs: 14m Ω @ 10.5A, 10V
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