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- Manufacturer No：SI4403CDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4403CDY-T1-GE3
- SKU：225954
- Description：VISHAY - SI4403CDY-T1-GE3 - MOSFET, P CH, W/D, 20V, 13.4A, SO8
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SI4403CDY-T1-GE3 Details
VISHAY - SI4403CDY-T1-GE3 - MOSFET, P CH, W/D, 20V, 13.4A, SO8
SI4403CDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 8
- Published: 2012
- Factory Lead Time: 14 Weeks
- Drain to Source Breakdown Voltage: 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs): 8V
- FET Type: P-Channel
- Series: TrenchFET?
- Supplier Device Package: 8-SO
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Weight: 506.605978mg
- Rise Time: 18ns
- Resistance: 15.5mOhm
- Power Dissipation-Max: 5W Tc
- Current - Continuous Drain (Id) @ 25°C: 13.4A Tc
- Rds On Max: 15.5 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- REACH SVHC: No SVHC
- Max Operating Temperature: 150°C
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 2.5W
- Turn On Delay Time: 7 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Vgs (Max): ±8V
- Continuous Drain Current (ID): 13.4A
- Fall Time (Typ): 41 ns
- Threshold Voltage: -400mV
- Drain to Source Resistance: 15.5mOhm
- Turn-Off Delay Time: 108 ns
- Input Capacitance: 2.38nF
- Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
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