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- Manufacturer No：SI4448DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4448DY-T1-GE3
- SKU：246035
- Description：MOSFET N-CH 12V 50A 8-SOIC
User Guide
User Guide
SI4448DY-T1-GE3 Details
MOSFET N-CH 12V 50A 8-SOIC
SI4448DY-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2005
- Element Configuration: Single
- Width: 4mm
- Threshold Voltage: 1V
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 50A
- Drain Current-Max (Abs) (ID): 32A
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Fall Time (Typ): 33 ns
- Turn On Delay Time: 38 ns
- Weight: 186.993455mg
- Turn-Off Delay Time: 240 ns
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 12350pF @ 6V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 12V
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Length: 5mm
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Height: 1.55mm
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C: 50A Tc
- Rise Time: 22ns
- Power Dissipation-Max: 3.5W Ta 7.8W Tc
- Rds On (Max) @ Id, Vgs: 1.7m Ω @ 20A, 4.5V
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