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SI4480DY-T1-E3123
  • Manufacturer No:
    SI4480DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    237308
  • Description:
    MOSFET N-CH 80V 6A 8-SOIC
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SI4480DY-T1-E3
  • Manufacturer No:
    SI4480DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI4480DY-T1-E3
  • SKU:
    237308
  • Description:
    MOSFET N-CH 80V 6A 8-SOIC

SI4480DY-T1-E3 Details

MOSFET N-CH 80V 6A 8-SOIC

SI4480DY-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Published: 2016
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Drain Current (ID): 6A
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Breakdown Voltage: 80V
  • Power Dissipation: 2.5W
  • Fall Time (Typ): 22 ns
  • Drain to Source Resistance: 35mOhm
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Turn On Delay Time: 12.5 ns
  • Weight: 186.993455mg
  • Rds On Max: 35 mΩ
  • Rise Time: 12.5ns
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Max Operating Temperature: 150°C
  • Length: 5mm
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 80V
  • Vgs (Max): ±20V
  • Height: 1.55mm
  • Resistance: 35mOhm
  • Supplier Device Package: 8-SO
  • Power Dissipation-Max: 2.5W Ta
  • Turn-Off Delay Time: 52 ns
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs(th) (Max) @ Id: 2V @ 250μA (Min)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V

Excellent

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Excellent

Based on reviews

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