SI4500BDY-T1-GE3Vishay Siliconix
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    SI4500BDY-T1-GE3123
    • Manufacturer No：
      SI4500BDY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      13711058
    • Description：
      MOSFET N/P-CH 20V 6.6A 8-SOIC
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    SI4500BDY-T1-GE3
    • Manufacturer No：
      SI4500BDY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4500BDY-T1-GE3
    • SKU：
      13711058
    • Description：
      MOSFET N/P-CH 20V 6.6A 8-SOIC

    User Guide

    User Guide

    SI4500BDY-T1-GE3 Details

    MOSFET N/P-CH 20V 6.6A 8-SOIC

    SI4500BDY-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Published: 2012
    • Reach Compliance Code: unknown
    • Gate to Source Voltage (Vgs): 12V
    • Max Operating Temperature: 150°C
    • Drain to Source Voltage (Vdss): 20V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Threshold Voltage: 1.5V
    • Subcategory: Other Transistors
    • Turn On Delay Time: 20 ns
    • Rise Time: 35 ns
    • Power Dissipation: 1.3W
    • Turn-Off Delay Time: 55 ns
    • Series: TrenchFET?
    • Drain Current-Max (Abs) (ID): 6.6A
    • Continuous Drain Current (ID): 9.1A
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 20m Ω @ 9.1A, 4.5V
    • Base Part Number: SI4500
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • Pbfree Code: yes
    • Min Operating Temperature: -55°C
    • Number of Pins: 8
    • Pin Count: 8
    • Qualification Status: Not Qualified
    • REACH SVHC: No SVHC
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Length: 5mm
    • Width: 4mm
    • Packaging: Cut Tape (CT)
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Fall Time (Typ): 35 ns
    • Height: 1.55mm
    • Max Power Dissipation: 1.3W
    • FET Feature: Logic Level Gate
    • Vgs(th) (Max) @ Id: 1.5V @ 250μA
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Weight: 186.993455mg
    • FET Type: N and P-Channel, Common Drain
    • Current - Continuous Drain (Id) @ 25°C: 6.6A 3.8A
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