SI4501ADY-T1-GE3Vishay Siliconix
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    SI4501ADY-T1-GE3123
    • Manufacturer No：
      SI4501ADY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      304218
    • Description：
      MOSFET N/P-CH 30V/8V 8-SOIC
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    SI4501ADY-T1-GE3
    • Manufacturer No：
      SI4501ADY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4501ADY-T1-GE3
    • SKU：
      304218
    • Description：
      MOSFET N/P-CH 30V/8V 8-SOIC

    User Guide

    User Guide

    SI4501ADY-T1-GE3 Details

    MOSFET N/P-CH 30V/8V 8-SOIC

    SI4501ADY-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Part Status: Obsolete
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Drain to Source Breakdown Voltage: 8V
    • Power Dissipation: 1.3W
    • Power - Max: 1.3W
    • Series: TrenchFET?
    • Supplier Device Package: 8-SO
    • Rds On Max: 18 mΩ
    • Vgs(th) (Max) @ Id: 1.8V @ 250μA
    • Drain to Source Voltage (Vdss): 30V 8V
    • Current - Continuous Drain (Id) @ 25°C: 6.3A 4.1A
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Min Operating Temperature: -55°C
    • Number of Pins: 8
    • Published: 2009
    • Operating Temperature: -55°C~150°C TJ
    • Gate to Source Voltage (Vgs): 8V
    • Threshold Voltage: 800mV
    • Max Power Dissipation: 1.3W
    • FET Feature: Logic Level Gate
    • Continuous Drain Current (ID): 4.1A
    • Drain to Source Resistance: 42mOhm
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • FET Type: N and P-Channel, Common Drain
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
    • Base Part Number: SI4501
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