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SI4539ADY-T1-GE3123
  • Manufacturer No:
    SI4539ADY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    260021
  • Description:
    MOSFET 30V 5.9/4.9A 2.0W 36/53mohm @ 10V
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SI4539ADY-T1-GE3
  • Manufacturer No:
    SI4539ADY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI4539ADY-T1-GE3
  • SKU:
    260021
  • Description:
    MOSFET 30V 5.9/4.9A 2.0W 36/53mohm @ 10V

SI4539ADY-T1-GE3 Details

MOSFET 30V 5.9/4.9A 2.0W 36/53mohm @ 10V

SI4539ADY-T1-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • FET Feature: Logic Level Gate
  • Continuous Drain Current (ID): 3.7A
  • Power Dissipation: 1.1W
  • Terminal Finish: PURE MATTE TIN
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max: 0.036Ohm
  • Rds On (Max) @ Id, Vgs: 36m Ω @ 5.9A, 10V
  • Base Part Number: SI4539
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Published: 2016
  • Peak Reflow Temperature (Cel): 260
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Rise Time: 10ns
  • Fall Time (Typ): 10 ns
  • Turn-Off Delay Time: 40 ns
  • Series: TrenchFET?
  • Max Power Dissipation: 1.1W
  • Drain Current-Max (Abs) (ID): 4.4A
  • FET Type: N and P-Channel
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
  • Current - Continuous Drain (Id) @ 25°C: 4.4A 3.7A

Excellent

Based on reviews

Excellent

Based on reviews

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