Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:80288
- Qty Unit Price price
- 1 $1.564 $1.564
- 10 $1.548 $15.48
- 100 $1.532 $153.2
- 1000 $1.516 $1516
- 10000 $1.5 $15000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI4559ADY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4559ADY-T1-E3
- SKU：252125
- Description：MOSFET N/P-CH 60V 5.3A 8-SOIC
User Guide
User Guide
SI4559ADY-T1-E3 Details
MOSFET N/P-CH 60V 5.3A 8-SOIC
SI4559ADY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Dual Supply Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Published: 2005
- Length: 5mm
- Power Dissipation: 2W
- Width: 4mm
- Threshold Voltage: 1V
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 30 ns
- Turn-Off Delay Time: 40 ns
- Resistance: 120mOhm
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Rds On (Max) @ Id, Vgs: 58m Ω @ 4.3A, 10V
- Power - Max: 3.1W 3.4W
- Base Part Number: SI4559
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Termination: SMD/SMT
- Drain to Source Breakdown Voltage: 60V
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Max Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 4.5A
- Fall Time (Typ): 30 ns
- Height: 1.55mm
- Rise Time: 70 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain Current-Max (Abs) (ID): 4.3A
- FET Type: N and P-Channel
- Weight: 506.605978mg
- Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
- Avalanche Energy Rating (Eas): 6.1 mJ
- Current - Continuous Drain (Id) @ 25°C: 5.3A 3.9A
Search for similar products
SI4559ADY-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI4559ADY-T1-E3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
