SI4808DY-T1-GE3Vishay Siliconix
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    SI4808DY-T1-GE3123
    • Manufacturer No：
      SI4808DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      248851
    • Description：
      MOSFET 2N-CH 30V 5.7A 8SOIC
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    SI4808DY-T1-GE3
    • Manufacturer No：
      SI4808DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4808DY-T1-GE3
    • SKU：
      248851
    • Description：
      MOSFET 2N-CH 30V 5.7A 8SOIC

    User Guide

    User Guide

    SI4808DY-T1-GE3 Details

    MOSFET 2N-CH 30V 5.7A 8SOIC

    SI4808DY-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • Number of Pins: 8
    • Pin Count: 8
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Subcategory: FET General Purpose Power
    • FET Feature: Logic Level Gate
    • Max Power Dissipation: 1.1W
    • Continuous Drain Current (ID): 5.7A
    • Terminal Finish: PURE MATTE TIN
    • Series: LITTLE FOOT?
    • Vgs(th) (Max) @ Id: 800mV @ 250μA (Min)
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Terminations: 8
    • Factory Lead Time: 6 Weeks
    • Terminal Form: GULL WING
    • Reach Compliance Code: unknown
    • Published: 2014
    • Power Dissipation: 2W
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • FET Type: 2 N-Channel (Dual)
    • Resistance: 22mOhm
    • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Rds On (Max) @ Id, Vgs: 22m Ω @ 7.5A, 10V
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