Add to like
Add to project list
SI4823DY-T1-GE3123
  • Manufacturer No:
    SI4823DY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    249341
  • Description:
    MOSFET P-CH 20V 4.1A 8-SOIC
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

SI4823DY-T1-GE3
  • Manufacturer No:
    SI4823DY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI4823DY-T1-GE3
  • SKU:
    249341
  • Description:
    MOSFET P-CH 20V 4.1A 8-SOIC

SI4823DY-T1-GE3 Details

MOSFET P-CH 20V 4.1A 8-SOIC

SI4823DY-T1-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Gate to Source Voltage (Vgs): 12V
  • Transistor Element Material: SILICON
  • Factory Lead Time: 15 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Fall Time (Typ): 10 ns
  • Rise Time: 40 ns
  • Drain to Source Breakdown Voltage: -20V
  • Turn-Off Delay Time: 18 ns
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation: 1.7W
  • Weight: 186.993455mg
  • FET Feature: Schottky Diode (Isolated)
  • Current - Continuous Drain (Id) @ 25°C: 4.1A Tc
  • Power Dissipation-Max: 1.7W Ta 2.8W Tc
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Published: 2013
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 20V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Mode: ENHANCEMENT MODE
  • FET Type: P-Channel
  • Continuous Drain Current (ID): 3.3A
  • Turn On Delay Time: 18 ns
  • Vgs (Max): ±12V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Terminal Finish: PURE MATTE TIN
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Series: LITTLE FOOT?
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Rds On (Max) @ Id, Vgs: 108m Ω @ 3.3A, 4.5V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via