SI4886DY-T1-E3Vishay Siliconix
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    SI4886DY-T1-E3123
    • Manufacturer No：
      SI4886DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      251782
    • Description：
      MOSFET N-CH 30V 9.5A 8-SOIC
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    SI4886DY-T1-E3
    • Manufacturer No：
      SI4886DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4886DY-T1-E3
    • SKU：
      251782
    • Description：
      MOSFET N-CH 30V 9.5A 8-SOIC

    User Guide

    User Guide

    SI4886DY-T1-E3 Details

    MOSFET N-CH 30V 9.5A 8-SOIC

    SI4886DY-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2013
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Drain to Source Voltage (Vdss): 30V
    • Width: 4mm
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 5 ns
    • Series: TrenchFET?
    • Subcategory: FET General Purpose Powers
    • Power Dissipation: 1.56W
    • Nominal Vgs: 800 mV
    • Power Dissipation-Max: 1.56W Ta
    • Vgs(th) (Max) @ Id: 800mV @ 250μA (Min)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 30V
    • Continuous Drain Current (ID): 13A
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Rise Time: 5ns
    • Height: 1.55mm
    • Turn On Delay Time: 14 ns
    • Drain Current-Max (Abs) (ID): 9.5A
    • Turn-Off Delay Time: 42 ns
    • Weight: 506.605978mg
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A Ta
    • Rds On (Max) @ Id, Vgs: 10m Ω @ 13A, 10V
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