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SI4940DY-T1-E3123
  • Manufacturer No:
    SI4940DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    251628
  • Description:
    MOSFET 2N-CH 40V 4.2A 8-SOIC
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SI4940DY-T1-E3
  • Manufacturer No:
    SI4940DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI4940DY-T1-E3
  • SKU:
    251628
  • Description:
    MOSFET 2N-CH 40V 4.2A 8-SOIC

SI4940DY-T1-E3 Details

MOSFET 2N-CH 40V 4.2A 8-SOIC

SI4940DY-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Element Configuration: Dual
  • Length: 5mm
  • Width: 4mm
  • Drain to Source Breakdown Voltage: 40V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Height: 1.55mm
  • Turn On Delay Time: 7 ns
  • Continuous Drain Current (ID): 4.2A
  • FET Feature: Logic Level Gate
  • FET Type: 2 N-Channel (Dual)
  • Power Dissipation: 1.1W
  • Supplier Device Package: 8-SO
  • Drain to Source Resistance: 36mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Rds On Max: 36 mΩ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Max Operating Temperature: 150°C
  • Published: 2009
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Voltage (Vdss): 40V
  • Operating Temperature: -55°C~150°C TJ
  • Turn-Off Delay Time: 15 ns
  • Fall Time (Typ): 12 ns
  • Rise Time: 12ns
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Series: TrenchFET?
  • Max Power Dissipation: 1.1W
  • Power - Max: 1.1W
  • Resistance: 36mOhm
  • Weight: 506.605978mg
  • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V

Excellent

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Excellent

Based on reviews

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