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- Manufacturer No：SI5441BDC-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI5441BDC-T1-GE3
- SKU：316687
- Description：MOSFET P-CH 20V 4.4A 1206-8
User Guide
User Guide
SI5441BDC-T1-GE3 Details
MOSFET P-CH 20V 4.4A 1206-8
SI5441BDC-T1-GE3 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Finish: Matte Tin (Sn)
- Threshold Voltage: 12V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Technology: MOSFET (Metal Oxide)
- Terminal Form: C BEND
- Fall Time (Typ): 50 ns
- Rise Time: 50 ns
- FET Type: P-Channel
- Drain Current-Max (Abs) (ID): 4.4A
- Package / Case: 8-SMD, Flat Lead
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Drain-source On Resistance-Max: 0.045Ohm
- Power Dissipation-Max: 1.3W Ta
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 45m Ω @ 4.4A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2009
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Turn-Off Delay Time: 50 ns
- Turn On Delay Time: 15 ns
- Series: TrenchFET?
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Continuous Drain Current (ID): 61A
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Weight: 84.99187mg
- Current - Continuous Drain (Id) @ 25°C: 4.4A Ta
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