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- Manufacturer No：SI5475DDC-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI5475DDC-T1-GE3
- SKU：347117
- Description：MOSFET P-CH 12V 6A 1206-8
User Guide
User Guide
SI5475DDC-T1-GE3 Details
MOSFET P-CH 12V 6A 1206-8
SI5475DDC-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Drain to Source Voltage (Vdss): 12V
- Published: 2014
- Element Configuration: Single
- Current: 6A
- Height: 1.1mm
- Width: 1.65mm
- Drain to Source Breakdown Voltage: -12V
- FET Type: P-Channel
- Turn-Off Delay Time: 45 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Rise Time: 40ns
- Package / Case: 8-SMD, Flat Lead
- Resistance: 32mOhm
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Weight: 84.99187mg
- Power Dissipation: 5.7W
- Rds On Max: 32 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Part Status: Obsolete
- Voltage: 12V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Gate to Source Voltage (Vgs): 8V
- Length: 3.05mm
- Turn On Delay Time: 20 ns
- Fall Time (Typ): 40 ns
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Input Capacitance: 1.6nF
- Drain to Source Resistance: 32mOhm
- Threshold Voltage: -400mV
- Continuous Drain Current (ID): -6A
- Supplier Device Package: 1206-8 ChipFET?
- Power Dissipation-Max: 2.3W Ta 5.7W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
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