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- Manufacturer No：SI5515CDC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：
Get the PDF file - SKU：249220
- Description：MOSFET N/P-CH 20V 4A 1206-8
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- Manufacturer No：SI5515CDC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI5515CDC-T1-E3
- SKU：249220
- Description：MOSFET N/P-CH 20V 4A 1206-8
User Guide
User Guide
SI5515CDC-T1-E3 Details
MOSFET N/P-CH 20V 4A 1206-8
SI5515CDC-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- REACH SVHC: No SVHC
- Published: 2015
- Factory Lead Time: 14 Weeks
- Drain to Source Breakdown Voltage: 20V
- Drain Current-Max (Abs) (ID): 4A
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Length: 3.05mm
- Threshold Voltage: 800mV
- Turn-Off Delay Time: 25 ns
- Power Dissipation: 1.3W
- Series: TrenchFET?
- Package / Case: 8-SMD, Flat Lead
- FET Type: N and P-Channel
- Current - Continuous Drain (Id) @ 25°C: 4A Tc
- Drain-source On Resistance-Max: 0.036Ohm
- Vgs(th) (Max) @ Id: 800mV @ 250μA
- Base Part Number: SI5515
- Rds On (Max) @ Id, Vgs: 36m Ω @ 6A, 4.5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 4A
- Height: 1.1mm
- Gate to Source Voltage (Vgs): 8V
- Width: 1.65mm
- Turn On Delay Time: 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 6 ns
- FET Feature: Logic Level Gate
- Rise Time: 32 ns
- Max Power Dissipation: 3.1W
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Nominal Vgs: 800 mV
- Weight: 84.99187mg
- Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
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