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SI6544BDQ-T1-E3123
  • Manufacturer No:
    SI6544BDQ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    265923
  • Description:
    MOSFET N/P-CH 30V 3.7A 8-TSSOP
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  • Qty Unit Price price
  • 1 $0.603 $0.603
  • 10 $0.597 $5.97
  • 100 $0.591 $59.1
  • 1000 $0.585 $585

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SI6544BDQ-T1-E3
  • Manufacturer No:
    SI6544BDQ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI6544BDQ-T1-E3
  • SKU:
    265923
  • Description:
    MOSFET N/P-CH 30V 3.7A 8-TSSOP

SI6544BDQ-T1-E3 Details

MOSFET N/P-CH 30V 3.7A 8-TSSOP

SI6544BDQ-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2009
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Operating Mode: ENHANCEMENT MODE
  • Width: 3.0988mm
  • Turn-Off Delay Time: 40 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Fall Time (Typ): 14 ns
  • FET Feature: Logic Level Gate
  • Series: TrenchFET?
  • Height: 1.0414mm
  • Resistance: 32mOhm
  • Nominal Vgs: 1 V
  • Power Dissipation: 830mW
  • Current - Continuous Drain (Id) @ 25°C: 3.7A 3.8A
  • Base Part Number: SI6544
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Element Configuration: Dual
  • REACH SVHC: Unknown
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
  • Length: 4.4958mm
  • Turn On Delay Time: 14 ns
  • Rise Time: 14 ns
  • Continuous Drain Current (ID): 4.3A
  • Drain Current-Max (Abs) (ID): 3.7A
  • FET Type: N and P-Channel
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Max Power Dissipation: 830mW
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Rds On (Max) @ Id, Vgs: 43m Ω @ 3.8A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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