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- Manufacturer No：SI6562CDQ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI6562CDQ-T1-GE3
- SKU：252868
- Description：MOSFET N/P-CH 20V 6.7A 8-TSSOP
User Guide
User Guide
SI6562CDQ-T1-GE3 Details
MOSFET N/P-CH 20V 6.7A 8-TSSOP
SI6562CDQ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Fall Time (Typ): 25 ns
- Turn On Delay Time: 30 ns
- Turn-Off Delay Time: 45 ns
- FET Feature: Logic Level Gate
- Drain Current-Max (Abs) (ID): 6.7A
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- FET Type: N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Base Part Number: SI6562
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 3mm
- Height: 1.2mm
- Width: 4.4mm
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 25 ns
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- Threshold Voltage: 600mV
- Series: TrenchFET?
- Continuous Drain Current (ID): 6.1A
- Max Power Dissipation: 1.7W
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Weight: 157.991892mg
- Power - Max: 1.6W 1.7W
- Rds On (Max) @ Id, Vgs: 22m Ω @ 5.7A, 4.5V
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