SI6968BEDQ-T1-E3Vishay Siliconix
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    SI6968BEDQ-T1-E3123
    • Manufacturer No：
      SI6968BEDQ-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      248781
    • Description：
      MOSFET 2N-CH 20V 5.2A 8TSSOP
    • Quantity：
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    Inventory:2024
    • Qty Unit Price price
    • 1 $1933.445 $1933.445
    • 10 $1914.301 $19143.01
    • 100 $1895.347 $189534.7
    • 1000 $1876.581 $1876581
    • 10000 $1858 $18580000

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    SI6968BEDQ-T1-E3
    • Manufacturer No：
      SI6968BEDQ-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI6968BEDQ-T1-E3
    • SKU：
      248781
    • Description：
      MOSFET 2N-CH 20V 5.2A 8TSSOP

    User Guide

    User Guide

    SI6968BEDQ-T1-E3 Details

    MOSFET 2N-CH 20V 5.2A 8TSSOP

    SI6968BEDQ-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Power Dissipation: 1W
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Dual
    • REACH SVHC: Unknown
    • Height: 1mm
    • Drain to Source Breakdown Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Threshold Voltage: 600mV
    • Series: TrenchFET?
    • Resistance: 22mOhm
    • FET Type: 2 N-Channel (Dual) Common Drain
    • Weight: 157.991892mg
    • Vgs(th) (Max) @ Id: 1.6V @ 250μA
    • Fall Time (Typ): 510 ns
    • Rds On (Max) @ Id, Vgs: 22m Ω @ 6.5A, 4.5V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Max Power Dissipation: 1W
    • Gate to Source Voltage (Vgs): 12V
    • Factory Lead Time: 14 Weeks
    • Published: 2008
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 20V
    • Length: 3mm
    • Width: 4.4mm
    • Subcategory: FET General Purpose Power
    • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
    • FET Feature: Logic Level Gate
    • Continuous Drain Current (ID): 5.2A
    • Rise Time: 330 ns
    • Turn On Delay Time: 245 ns
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
    • Nominal Vgs: 600 mV
    • Turn-Off Delay Time: 860 ns
    • Base Part Number: SI6968
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