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- Manufacturer No：SI7120ADN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7120ADN-T1-GE3
- SKU：332265
- Description：MOSFET N-CH 60V 6A 1212-8 PPAK
User Guide
User Guide
SI7120ADN-T1-GE3 Details
MOSFET N-CH 60V 6A 1212-8 PPAK
SI7120ADN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Threshold Voltage: 2.5V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain Current-Max (Abs) (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Turn-Off Delay Time: 50 ns
- Fall Time (Typ): 12 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Terminal Finish: PURE MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 6A Ta
- JESD-30 Code: S-PDSO-C5
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Number of Terminations: 5
- Published: 2011
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 12 ns
- Turn On Delay Time: 14 ns
- Continuous Drain Current (ID): 9.5A
- Power Dissipation-Max: 1.5W Ta
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 24 mJ
- Rds On (Max) @ Id, Vgs: 21m Ω @ 9.5A, 10V
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