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- Manufacturer No：SI7143DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7143DP-T1-GE3
- SKU：228196
- Description：MOSFET 30V 35A P-CH MOSFET
User Guide
User Guide
SI7143DP-T1-GE3 Details
MOSFET 30V 35A P-CH MOSFET
SI7143DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 60A
- FET Type: P-Channel
- Drain to Source Breakdown Voltage: -30V
- Weight: 506.605978mg
- Power Dissipation: 4.2W
- JESD-30 Code: R-XDSO-C5
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- Nominal Vgs: -1.2 V
- Power Dissipation-Max: 4.2W Ta 35.7W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Resistance: 10mOhm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Drain Current-Max (Abs) (ID): 35A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Operating Temperature: -50°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Continuous Drain Current (ID): 16.1A
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
- Rds On (Max) @ Id, Vgs: 10m Ω @ 16.1A, 10V
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