SI7224DN-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    SI7224DN-T1-GE3123
    • Manufacturer No：
      SI7224DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      333401
    • Description：
      MOSFET Dual Asym N-Ch 30V 35/28mohm @ 10V
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI7224DN-T1-GE3
    • Manufacturer No：
      SI7224DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI7224DN-T1-GE3
    • SKU：
      333401
    • Description：
      MOSFET Dual Asym N-Ch 30V 35/28mohm @ 10V

    User Guide

    User Guide

    SI7224DN-T1-GE3 Details

    MOSFET Dual Asym N-Ch 30V 35/28mohm @ 10V

    SI7224DN-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Number of Terminations: 6
    • Published: 2015
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Drain Current-Max (Abs) (ID): 6A
    • Transistor Application: SWITCHING
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Rise Time: 10 ns
    • Width: 3.3mm
    • Turn-Off Delay Time: 15 ns
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Drain-source On Resistance-Max: 0.035Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
    • Power - Max: 17.8W 23W
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Element Configuration: Dual
    • Factory Lead Time: 15 Weeks
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Continuous Drain Current (ID): 6A
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Fall Time (Typ): 10 ns
    • Length: 3.3mm
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Turn On Delay Time: 20 ns
    • Series: TrenchFET?
    • Height: 1.04mm
    • Max Power Dissipation: 23W
    • Package / Case: PowerPAK? 1212-8 Dual
    • JESD-30 Code: S-XDSO-C6
    • Rds On (Max) @ Id, Vgs: 35m Ω @ 6.5A, 10V
    • Base Part Number: SI7224
    Search for similar products

    SI7224DN-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7224DN-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via