SI7374DP-T1-GE3Vishay Siliconix
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    SI7374DP-T1-GE3123
    • Manufacturer No：
      SI7374DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      246375
    • Description：
      MOSFET 30V 24A 56W 5.5mohm @ 10V
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    SI7374DP-T1-GE3
    • Manufacturer No：
      SI7374DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7374DP-T1-GE3
    • SKU：
      246375
    • Description：
      MOSFET 30V 24A 56W 5.5mohm @ 10V

    User Guide

    User Guide

    SI7374DP-T1-GE3 Details

    MOSFET 30V 24A 56W 5.5mohm @ 10V

    SI7374DP-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Channels: 1
    • Min Operating Temperature: -55°C
    • Max Operating Temperature: 150°C
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Fall Time (Typ): 10 ns
    • Series: TrenchFET?
    • Supplier Device Package: PowerPAK? SO-8
    • Drain to Source Resistance: 5.5mOhm
    • Current - Continuous Drain (Id) @ 25°C: 24A Tc
    • Input Capacitance: 5.5nF
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
    • Power Dissipation-Max: 5W Ta 56W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Published: 2016
    • Factory Lead Time: 14 Weeks
    • Drain to Source Voltage (Vdss): 30V
    • FET Type: N-Channel
    • Vgs (Max): ±20V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Package / Case: PowerPAK? SO-8
    • Weight: 506.605978mg
    • Continuous Drain Current (ID): 23.8A
    • Vgs(th) (Max) @ Id: 2.8V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
    • Rds On Max: 5.5 mΩ
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