SI7392ADP-T1-E3Vishay Siliconix
    Add to like
    Add to project list
    SI7392ADP-T1-E3123
    • Manufacturer No：
      SI7392ADP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      228745
    • Description：
      MOSFET N-CH 30V 30A PPAK SO-8
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI7392ADP-T1-E3
    • Manufacturer No：
      SI7392ADP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7392ADP-T1-E3
    • SKU：
      228745
    • Description：
      MOSFET N-CH 30V 30A PPAK SO-8

    User Guide

    User Guide

    SI7392ADP-T1-E3 Details

    MOSFET N-CH 30V 30A PPAK SO-8

    SI7392ADP-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Pin Count: 8
    • Published: 2013
    • Number of Terminations: 5
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 17.5A
    • Rise Time: 35ns
    • Series: TrenchFET?
    • Package / Case: PowerPAK? SO-8
    • Additional Feature: FAST SWITCHING
    • JESD-30 Code: R-XDSO-C5
    • Avalanche Energy Rating (Eas): 30 mJ
    • Power Dissipation-Max: 5W Ta 27.5W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Power Dissipation: 5W
    • FET Type: N-Channel
    • Drain Current-Max (Abs) (ID): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 50A
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 8 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Turn-Off Delay Time: 23 ns
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Drain-source On Resistance-Max: 0.0075Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
    • Rds On (Max) @ Id, Vgs: 7.5m Ω @ 12.5A, 10V
    Search for similar products

    SI7392ADP-T1-E3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7392ADP-T1-E3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via