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SI7465DP-T1-E3123
  • Manufacturer No:
    SI7465DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    331670
  • Description:
    MOSFET P-CH 60V 3.2A PPAK SO-8
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Inventory:22909
  • Qty Unit Price price
  • 1 $212.286 $212.286
  • 10 $210.184 $2101.84
  • 100 $208.102 $20810.2
  • 1000 $206.041 $206041
  • 10000 $204 $2040000

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SI7465DP-T1-E3
  • Manufacturer No:
    SI7465DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7465DP-T1-E3
  • SKU:
    331670
  • Description:
    MOSFET P-CH 60V 3.2A PPAK SO-8

SI7465DP-T1-E3 Details

MOSFET P-CH 60V 3.2A PPAK SO-8

SI7465DP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Number of Terminations: 5
  • Max Junction Temperature (Tj): 150°C
  • Published: 2009
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 25A
  • Subcategory: Other Transistors
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Drain Current-Max (Abs) (ID): 3.2A
  • Fall Time (Typ): 9 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: TrenchFET?
  • Threshold Voltage: -3V
  • Package / Case: PowerPAK? SO-8
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Width: 5.89mm
  • JESD-30 Code: R-XDSO-C5
  • Current - Continuous Drain (Id) @ 25°C: 3.2A Ta
  • Rds On (Max) @ Id, Vgs: 64m Ω @ 5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Voltage (Vdss): 60V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Length: 4.9mm
  • Power Dissipation: 1.5W
  • Vgs (Max): ±20V
  • Terminal Form: C BEND
  • Case Connection: DRAIN
  • FET Type: P-Channel
  • Turn On Delay Time: 8 ns
  • Rise Time: 9 ns
  • Height: 1.12mm
  • Turn-Off Delay Time: 65 ns
  • Drain to Source Breakdown Voltage: -60V
  • Weight: 506.605978mg
  • Power Dissipation-Max: 1.5W Ta
  • Resistance: 64mOhm
  • Continuous Drain Current (ID): -5A
  • Avalanche Energy Rating (Eas): 24.2 mJ

Excellent

Based on reviews

Excellent

Based on reviews

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