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- Manufacturer No：SI7469DP-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7469DP-T1-E3
- SKU：324890
- Description：MOSFET P-CH 80V 28A PPAK SO-8
User Guide
User Guide
SI7469DP-T1-E3 Details
MOSFET P-CH 80V 28A PPAK SO-8
SI7469DP-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Resistance: 25mOhm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Threshold Voltage: -10V
- Package / Case: PowerPAK? SO-8
- Rise Time: 220 ns
- Drain to Source Breakdown Voltage: -80V
- Width: 5.89mm
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Continuous Drain Current (ID): -28A
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Pin Count: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: unknown
- Published: 2011
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Length: 4.9mm
- Transistor Application: SWITCHING
- Voltage: 80V
- Terminal Form: C BEND
- Case Connection: DRAIN
- FET Type: P-Channel
- Turn On Delay Time: 45 ns
- Height: 1.12mm
- Current: 27A
- Fall Time (Typ): 110 ns
- Turn-Off Delay Time: 95 ns
- Weight: 506.605978mg
- Power Dissipation: 83W
- Current - Continuous Drain (Id) @ 25°C: 28A Tc
- JESD-30 Code: R-PDSO-C5
- Power Dissipation-Max: 5.2W Ta 83.3W Tc
- Rds On (Max) @ Id, Vgs: 25m Ω @ 10.2A, 10V
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