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- Manufacturer No：SI7478DP-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7478DP-T1-E3
- SKU：266119
- Description：MOSFET 60V 20A 5.4W 7.5mohm @ 10V
User Guide
User Guide
SI7478DP-T1-E3 Details
MOSFET 60V 20A 5.4W 7.5mohm @ 10V
SI7478DP-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Number of Terminations: 5
- Terminal Finish: Matte Tin (Sn)
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Element Configuration: Single
- Continuous Drain Current (ID): 20A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 20 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Height: 1.04mm
- Resistance: 7.5mOhm
- Weight: 506.605978mg
- Width: 5.89mm
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Power Dissipation-Max: 1.9W Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Drain to Source Breakdown Voltage: 60V
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Length: 4.9mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 60A
- Turn On Delay Time: 25 ns
- Rise Time: 20 ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Power Dissipation: 1.9W
- Turn-Off Delay Time: 115 ns
- JESD-30 Code: R-XDSO-C5
- Current - Continuous Drain (Id) @ 25°C: 15A Ta
- Rds On (Max) @ Id, Vgs: 7.5m Ω @ 20A, 10V
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