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- Manufacturer No：SI7613DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7613DN-T1-GE3
- SKU：226599
- Description：MOSFET P-CH 20V 35A 1212-8 PPAK
User Guide
User Guide
SI7613DN-T1-GE3 Details
MOSFET P-CH 20V 35A 1212-8 PPAK
SI7613DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2007
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID): 35A
- Width: 3.05mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 17A
- Fall Time (Typ): 9 ns
- Turn On Delay Time: 14 ns
- Vgs (Max): ±16V
- Height: 1.04mm
- Threshold Voltage: -1V
- Operating Temperature: -50°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Rds On (Max) @ Id, Vgs: 8.7m Ω @ 17A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 16V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Length: 3.05mm
- Pulsed Drain Current-Max (IDM): 60A
- FET Type: P-Channel
- Rise Time: 7 ns
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- Turn-Off Delay Time: 42 ns
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Power Dissipation: 3.8W
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-XDSO-C5
- Power Dissipation-Max: 3.8W Ta 52.1W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
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