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- Manufacturer No：SI7860ADP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7860ADP-T1-GE3
- SKU：315444
- Description：MOSFET 30V 16A 4.8W 9.5mohm @ 10V
User Guide
User Guide
SI7860ADP-T1-GE3 Details
MOSFET 30V 16A 4.8W 9.5mohm @ 10V
SI7860ADP-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Number of Pins: 8
- Published: 2013
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Continuous Drain Current (ID): 11A
- Rise Time: 12ns
- Turn On Delay Time: 18 ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Power Dissipation-Max: 1.8W Ta
- Current - Continuous Drain (Id) @ 25°C: 11A Ta
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Part Status: Obsolete
- Terminal Position: DUAL
- Number of Terminations: 5
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- JESD-30 Code: R-PDSO-F5
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Power Dissipation: 1.8W
- Fall Time (Typ): 19 ns
- Turn-Off Delay Time: 46 ns
- Avalanche Energy Rating (Eas): 60 mJ
- Drain-source On Resistance-Max: 0.0095Ohm
- Rds On (Max) @ Id, Vgs: 9.5m Ω @ 16A, 10V
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