SI7872DP-T1-GE3Vishay Siliconix
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    SI7872DP-T1-GE3123
    • Manufacturer No：
      SI7872DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      244507
    • Description：
      MOSFET 30V 10A 3.5W 22mohm @ 10V
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    SI7872DP-T1-GE3
    • Manufacturer No：
      SI7872DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI7872DP-T1-GE3
    • SKU：
      244507
    • Description：
      MOSFET 30V 10A 3.5W 22mohm @ 10V

    User Guide

    User Guide

    SI7872DP-T1-GE3 Details

    MOSFET 30V 10A 3.5W 22mohm @ 10V

    SI7872DP-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Gate to Source Voltage (Vgs): 12V
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Continuous Drain Current (ID): 10A
    • DS Breakdown Voltage-Min: 30V
    • Pulsed Drain Current-Max (IDM): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Rise Time: 10ns
    • Subcategory: FET General Purpose Power
    • Max Power Dissipation: 1.4W
    • Turn On Delay Time: 9 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Drain Current-Max (Abs) (ID): 6.4A
    • Weight: 506.605978mg
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Series: LITTLE FOOT?
    • Rds On (Max) @ Id, Vgs: 22m Ω @ 7.5A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Number of Terminations: 6
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Published: 2009
    • Factory Lead Time: 15 Weeks
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Terminal Form: C BEND
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Power Dissipation: 1.4W
    • Fall Time (Typ): 9 ns
    • FET Feature: Logic Level Gate
    • Current - Continuous Drain (Id) @ 25°C: 6.4A
    • FET Type: 2 N-Channel (Half Bridge)
    • Package / Case: PowerPAK? SO-8 Dual
    • JESD-30 Code: R-XDSO-C6
    • Base Part Number: SI7872
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