Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $1.604 $1.604
- 10 $1.588 $15.88
- 100 $1.572 $157.2
- 1000 $1.556 $1556
- 10000 $1.5404 $15404
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI7880ADP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7880ADP-T1-GE3
- SKU：344488
- Description：MOSFET 30V 40A 83W 3.0mohm @ 10V
User Guide
User Guide
SI7880ADP-T1-GE3 Details
MOSFET 30V 40A 83W 3.0mohm @ 10V
SI7880ADP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2008
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 30 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Subcategory: FET General Purpose Powers
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 40A Tc
- Drain-source On Resistance-Max: 0.004Ohm
- JESD-30 Code: R-XDSO-C5
- Power Dissipation-Max: 5.4W Ta 83W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 40A
- Case Connection: DRAIN
- Turn On Delay Time: 20 ns
- Pulsed Drain Current-Max (IDM): 70A
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Rise Time: 14ns
- Power Dissipation: 5.4W
- Turn-Off Delay Time: 96 ns
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Rds On (Max) @ Id, Vgs: 3m Ω @ 20A, 10V
Search for similar products
SI7880ADP-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI7880ADP-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
