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- Manufacturer No：SI7956DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7956DP-T1-GE3
- SKU：279525
- Description：MOSFET 2N-CH 150V 2.6A PPAK SO-8
User Guide
User Guide
SI7956DP-T1-GE3 Details
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 8
- Number of Terminations: 6
- Drain to Source Voltage (Vdss): 150V
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Fall Time (Typ): 50 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Power Dissipation: 1.4W
- Turn On Delay Time: 13 ns
- Turn-Off Delay Time: 18 ns
- FET Type: 2 N-Channel (Dual)
- Rise Time: 36 ns
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Drain-source On Resistance-Max: 0.105Ohm
- Rds On (Max) @ Id, Vgs: 105m Ω @ 4.1A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 150V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation: 1.4W
- Continuous Drain Current (ID): 2.6A
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Weight: 506.605978mg
- Package / Case: PowerPAK? SO-8 Dual
- JESD-30 Code: R-XDSO-C6
- Base Part Number: SI7956
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