SI7994DP-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    SI7994DP-T1-GE3123
    • Manufacturer No：
      SI7994DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      365631
    • Description：
      MOSFET 30V 60A 46W 5.6mohm @ 10V
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:2213
    • Qty Unit Price price
    • 1 $595.228 $595.228
    • 10 $589.334 $5893.34
    • 100 $583.499 $58349.9
    • 1000 $577.721 $577721
    • 10000 $572 $5720000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI7994DP-T1-GE3
    • Manufacturer No：
      SI7994DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI7994DP-T1-GE3
    • SKU：
      365631
    • Description：
      MOSFET 30V 60A 46W 5.6mohm @ 10V

    User Guide

    User Guide

    SI7994DP-T1-GE3 Details

    MOSFET 30V 60A 46W 5.6mohm @ 10V

    SI7994DP-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Published: 2014
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 30V
    • Threshold Voltage: 1V
    • Transistor Application: SWITCHING
    • Terminal Form: C BEND
    • Continuous Drain Current (ID): 60A
    • Fall Time (Typ): 15 ns
    • Turn On Delay Time: 35 ns
    • Max Power Dissipation: 3.5W
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • FET Type: 2 N-Channel (Dual)
    • Height: 1.04mm
    • Weight: 506.605978mg
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
    • Package / Case: PowerPAK? SO-8 Dual
    • Rds On (Max) @ Id, Vgs: 5.6m Ω @ 20A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Number of Terminations: 6
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • REACH SVHC: Unknown
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Length: 4.9mm
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Rise Time: 15 ns
    • Turn-Off Delay Time: 40 ns
    • Power Dissipation: 3.5W
    • Series: TrenchFET?
    • Subcategory: FET General Purpose Powers
    • Resistance: 56mOhm
    • Width: 5.89mm
    • Power - Max: 46W
    • JESD-30 Code: R-XDSO-C6
    • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
    Search for similar products

    SI7994DP-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7994DP-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via