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SI8467DB-T2-E1123
  • Manufacturer No:
    SI8467DB-T2-E1
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    300198
  • Description:
    MOSFET P-CH 20V MICROFOOT
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SI8467DB-T2-E1
  • Manufacturer No:
    SI8467DB-T2-E1
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI8467DB-T2-E1
  • SKU:
    300198
  • Description:
    MOSFET P-CH 20V MICROFOOT

SI8467DB-T2-E1 Details

MOSFET P-CH 20V MICROFOOT

SI8467DB-T2-E1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Pins: 4
  • Published: 2010
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Turn-Off Delay Time: 50 ns
  • Fall Time (Typ): 20 ns
  • Series: TrenchFET?
  • Vgs (Max): ±12V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Resistance: 73mOhm
  • Package / Case: 4-XFBGA, CSPBGA
  • Power Dissipation-Max: 780mW Ta 1.8W Tc
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 4
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Terminal Position: BOTTOM
  • Terminal Form: BALL
  • Transistor Application: SWITCHING
  • Subcategory: Other Transistors
  • Turn On Delay Time: 25 ns
  • FET Type: P-Channel
  • Rise Time: 45ns
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Gate to Source Voltage (Vgs): -1.5V
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Continuous Drain Current (ID): -3.7A
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V

Excellent

Based on reviews

Excellent

Based on reviews

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