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SI9912DY-T1-E3123
  • Manufacturer No:
    SI9912DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    PMIC - Gate Drivers
  • Datasheet:
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  • SKU:
    410814
  • Description:
    Tape & Reel (TR) SI9912 Half-Bridge 2014 gate driver 25ns -40C~125C TJ 1A 1A 830mW
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SI9912DY-T1-E3
  • Manufacturer No:
    SI9912DY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    PMIC - Gate Drivers
  • Datasheet:
    SI9912DY-T1-E3
  • SKU:
    410814
  • Description:
    Tape & Reel (TR) SI9912 Half-Bridge 2014 gate driver 25ns -40C~125C TJ 1A 1A 830mW

SI9912DY-T1-E3 Details

Tape & Reel (TR) SI9912 Half-Bridge 2014 gate driver 25ns -40C~125C TJ 1A 1A 830mW

SI9912DY-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Drivers: 2
  • Mount: Surface Mount
  • Number of Functions: 1
  • Pbfree Code: yes
  • High Side Driver: YES
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Operating Supply Voltage: 5V
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2014
  • Output Current: 1A
  • High Side Voltage - Max (Bootstrap): 30V
  • Width: 3.9mm
  • Height Seated (Max): 1.75mm
  • Length: 4.9mm
  • Operating Temperature: -40°C~125°C TJ
  • Channel Type: Synchronous
  • Turn On Delay Time: 30 ns
  • Subcategory: MOSFET Drivers
  • Driven Configuration: Half-Bridge
  • Technology: MOS
  • Weight: 506.605978mg
  • Power Dissipation: 830mW
  • Base Part Number: SI9912
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Supply Voltage: 5V
  • Power Supplies: 5V
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Max Output Current: 1A
  • Output Peak Current Limit-Nom: 1A
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Voltage - Supply: 4.5V~5.5V
  • Operating Supply Current: 1mA
  • Input Type: Non-Inverting
  • Frequency: 1MHz
  • Fall Time (Typ): 25 ns
  • Propagation Delay: 30 ns
  • Rise Time: 25ns
  • Gate Type: N-Channel MOSFET
  • Current - Peak Output (Source, Sink): 1A 1A
  • Max Power Dissipation: 830mW
  • Rise / Fall Time (Typ): 30ns 20ns

Excellent

Based on reviews

Excellent

Based on reviews

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