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- Manufacturer No：SIA483DJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIA483DJ-T1-GE3
- SKU：283720
- Description：MOSFET P-CH 30V 12A SC70-6
User Guide
User Guide
SIA483DJ-T1-GE3 Details
MOSFET P-CH 30V 12A SC70-6
SIA483DJ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 6
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Terminal Form: NO LEAD
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Rise Time: 60 ns
- Width: 2.05mm
- Drain to Source Breakdown Voltage: -30V
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Package / Case: PowerPAK? SC-70-6
- JESD-30 Code: S-XDSO-N3
- Rds On (Max) @ Id, Vgs: 21m Ω @ 5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Pins: 6
- Published: 2015
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Height: 800μm
- Packaging: Cut Tape (CT)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 20 ns
- Power Dissipation: 3.5W
- Length: 2.05mm
- Series: TrenchFET?
- Turn-Off Delay Time: 27 ns
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- Continuous Drain Current (ID): -10A
- Power Dissipation-Max: 3.5W Ta 19W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
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