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- Manufacturer No：SIA923EDJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SIA923EDJ-T1-GE3
- SKU：294156
- Description：MOSFET, DUAL P-CH, -20V, POWERPAK SC70-6; Transistor Polarity: Dual P Channel; Co
User Guide
User Guide
SIA923EDJ-T1-GE3 Details
MOSFET, DUAL P-CH, -20V, POWERPAK SC70-6; Transistor Polarity: Dual P Channel; Co
SIA923EDJ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- REACH SVHC: Unknown
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- Turn On Delay Time: 15 ns
- Drain to Source Breakdown Voltage: -20V
- Rise Time: 16 ns
- FET Type: 2 P-Channel (Dual)
- Resistance: 54mOhm
- Weight: 28.009329mg
- Package / Case: PowerPAK? SC-70-6 Dual
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
- Base Part Number: SIA923
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Published: 2014
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Continuous Drain Current (ID): 4.5A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time: 30 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Power Dissipation: 1.9W
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Max Power Dissipation: 7.8W
- Nominal Vgs: -500 mV
- Rds On (Max) @ Id, Vgs: 54m Ω @ 3.8A, 4.5V
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