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- Manufacturer No：SIHG16N50C-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHG16N50C-E3
- SKU：369080
- Description：MOSFET N-CH 500V 16A TO-247AC
User Guide
User Guide
SIHG16N50C-E3 Details
MOSFET N-CH 500V 16A TO-247AC
SIHG16N50C-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Number of Terminations: 3
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2007
- Factory Lead Time: 11 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Power Dissipation: 250W
- Package / Case: TO-247-3
- Turn On Delay Time: 27 ns
- Turn-Off Delay Time: 29 ns
- Weight: 38.000013g
- Current - Continuous Drain (Id) @ 25°C: 16A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Rds On (Max) @ Id, Vgs: 380m Ω @ 8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 16A
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Vgs(th) (Max) @ Id: 5V @ 250μA
- JEDEC-95 Code: TO-247AC
- Fall Time (Typ): 31 ns
- Power Dissipation-Max: 250W Tc
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Rise Time: 156ns
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