SIHH20N50E-T1-GE3Vishay Siliconix
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    SIHH20N50E-T1-GE3123
    • Manufacturer No：
      SIHH20N50E-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      353832
    • Description：
      MOSFET N-CH 500V 22A POWERPAK8
    • Quantity：
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    Inventory:0
    • Qty Unit Price price
    • 1 $3.863 $3.863
    • 10 $3.824 $38.24
    • 100 $3.786 $378.6
    • 1000 $3.748 $3748
    • 10000 $3.71 $37100

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    SIHH20N50E-T1-GE3
    • Manufacturer No：
      SIHH20N50E-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIHH20N50E-T1-GE3
    • SKU：
      353832
    • Description：
      MOSFET N-CH 500V 22A POWERPAK8

    User Guide

    User Guide

    SIHH20N50E-T1-GE3 Details

    MOSFET N-CH 500V 22A POWERPAK8

    SIHH20N50E-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Factory Lead Time: 18 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Package / Case: 8-PowerTDFN
    • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
    • Rds On (Max) @ Id, Vgs: 147m Ω @ 10A, 10V
    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Voltage (Vdss): 500V
    • Series: E
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±30V
    • Current - Continuous Drain (Id) @ 25°C: 22A Tc
    • Power Dissipation-Max: 174W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2063pF @ 100V
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