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- Manufacturer No：SIHP6N65E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHP6N65E-GE3
- SKU：318116
- Description：Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB
User Guide
User Guide
SIHP6N65E-GE3 Details
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB
SIHP6N65E-GE3 Specification Parameters
- Part Status: Active
- Packaging: Bulk
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 18 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 7A
- Package / Case: TO-220-3
- DS Breakdown Voltage-Min: 650V
- Fall Time (Typ): 20 ns
- Turn-Off Delay Time: 30 ns
- Rise Time: 12ns
- Current - Continuous Drain (Id) @ 25°C: 7A Tc
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Avalanche Energy Rating (Eas): 56 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- Transistor Element Material: SILICON
- Element Configuration: Single
- FET Type: N-Channel
- Gate to Source Voltage (Vgs): 4V
- Drain Current-Max (Abs) (ID): 7A
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 650V
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Vgs (Max): ±30V
- Drain-source On Resistance-Max: 0.6Ohm
- Power Dissipation: 78W
- Power Dissipation-Max: 78W Tc
- Rds On (Max) @ Id, Vgs: 600m Ω @ 3A, 10V
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