Add to like
Add to project list
SIR474DP-T1-GE3123
  • Manufacturer No:
    SIR474DP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    382558
  • Description:
    MOSFET 30V 20A 29.8W
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:617
  • Qty Unit Price price
  • 1 $0.95 $0.95
  • 10 $0.94 $9.4
  • 100 $0.93 $93
  • 1000 $0.92 $920
  • 10000 $0.91 $9100

Not the price you want? Send RFQ Now and we'll contact you ASAP

SIR474DP-T1-GE3
  • Manufacturer No:
    SIR474DP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SIR474DP-T1-GE3
  • SKU:
    382558
  • Description:
    MOSFET 30V 20A 29.8W

SIR474DP-T1-GE3 Details

MOSFET 30V 20A 29.8W

SIR474DP-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.9mm
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Terminal Form: C BEND
  • Case Connection: DRAIN
  • Fall Time (Typ): 9 ns
  • Power Dissipation: 3.9W
  • Turn-Off Delay Time: 19 ns
  • Height: 1.04mm
  • Package / Case: PowerPAK? SO-8
  • Current - Continuous Drain (Id) @ 25°C: 20A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • JESD-30 Code: R-XDSO-C5
  • Rds On (Max) @ Id, Vgs: 9.5m Ω @ 10A, 10V
  • Power Dissipation-Max: 3.9W Ta 29.8W Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Pin Count: 8
  • Published: 2013
  • Number of Terminations: 5
  • Time@Peak Reflow Temperature-Max (s): 40
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Continuous Drain Current (ID): 20A
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 50A
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Rise Time: 12 ns
  • Turn On Delay Time: 14 ns
  • Series: TrenchFET?
  • Subcategory: FET General Purpose Powers
  • Vgs(th) (Max) @ Id: 2.2V @ 250μA
  • Weight: 506.605978mg
  • Width: 5.89mm
  • Avalanche Energy Rating (Eas): 20 mJ
  • Drain-source On Resistance-Max: 0.0095Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via