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- Manufacturer No：SIR873DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIR873DP-T1-GE3
- SKU：343782
- Description：TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
User Guide
User Guide
SIR873DP-T1-GE3 Details
TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
SIR873DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- FET Type: P-Channel
- JESD-30 Code: R-PDSO-F5
- Turn-Off Delay Time: 28 ns
- Package / Case: PowerPAK? SO-8
- Power Dissipation: 6.25W
- Power Dissipation-Max: 104W Tc
- Avalanche Energy Rating (Eas): 80 mJ
- Continuous Drain Current (ID): -9A
- Manufacturer Package Identifier: S17-0173_SINGLE
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 5
- Drain to Source Voltage (Vdss): 150V
- Factory Lead Time: 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Terminal Form: FLAT
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 1.12mm
- Drain Current-Max (Abs) (ID): 37A
- Drain to Source Breakdown Voltage: -150V
- Series: TrenchFET? Gen IV
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 37A Tc
- Drain-source On Resistance-Max: 0.0475Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 75V
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