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- Manufacturer No：SIR880DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIR880DP-T1-GE3
- SKU：293812
- Description：MOSFET N-CH 80V 60A PPAK SO-8
User Guide
User Guide
SIR880DP-T1-GE3 Details
MOSFET N-CH 80V 60A PPAK SO-8
SIR880DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Published: 2005
- Gate to Source Voltage (Vgs): 20V
- Threshold Voltage: 1.2V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: PowerPAK? SO-8
- Current - Continuous Drain (Id) @ 25°C: 60A Tc
- Nominal Vgs: 1.2 V
- JESD-30 Code: R-PDSO-C5
- Drain-source On Resistance-Max: 0.0067Ohm
- Rds On (Max) @ Id, Vgs: 5.9m Ω @ 20A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Channels: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Pin Count: 8
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Drain to Source Breakdown Voltage: 80V
- Terminal Form: C BEND
- Continuous Drain Current (ID): 60A
- Series: TrenchFET?
- Weight: 506.605978mg
- Power Dissipation: 6.25W
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Power Dissipation-Max: 6.25W Ta 104W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
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