SIZ728DT-T1-GE3Vishay Siliconix
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    SIZ728DT-T1-GE3123
    • Manufacturer No：
      SIZ728DT-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      309559
    • Description：
      MOSFET 25V 16A / 35A N-Ch MOSFET
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    SIZ728DT-T1-GE3
    • Manufacturer No：
      SIZ728DT-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SIZ728DT-T1-GE3
    • SKU：
      309559
    • Description：
      MOSFET 25V 16A / 35A N-Ch MOSFET

    User Guide

    User Guide

    SIZ728DT-T1-GE3 Details

    MOSFET 25V 16A / 35A N-Ch MOSFET

    SIZ728DT-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 6
    • Published: 2012
    • Drain to Source Breakdown Voltage: 25V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Threshold Voltage: 1V
    • Transistor Application: SWITCHING
    • Terminal Form: C BEND
    • Continuous Drain Current (ID): 35A
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Pulsed Drain Current-Max (IDM): 70A
    • Rise Time: 18 ns
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • FET Type: 2 N-Channel (Half Bridge)
    • Width: 3.73mm
    • Drain-source On Resistance-Max: 0.0077Ohm
    • Power - Max: 27W 48W
    • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Pin Count: 6
    • Element Configuration: Dual
    • REACH SVHC: Unknown
    • Factory Lead Time: 15 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Length: 6mm
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 10 ns
    • Height: 750μm
    • FET Feature: Logic Level Gate
    • Series: TrenchFET?
    • Max Power Dissipation: 48W
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
    • Case Connection: DRAIN SOURCE
    • Package / Case: 6-PowerPair?
    • Current - Continuous Drain (Id) @ 25°C: 16A 35A
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