SIZ980DT-T1-GE3Vishay Siliconix
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    SIZ980DT-T1-GE3123
    • Manufacturer No：
      SIZ980DT-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      418244
    • Description：
      MOSFET 30V Dual N-Channel
    • Quantity：
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    Inventory:7148
    • Qty Unit Price price
    • 1 $2282.047 $2282.047
    • 10 $2259.452 $22594.52
    • 100 $2237.081 $223708.1
    • 1000 $2214.931 $2214931
    • 10000 $2193 $21930000

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    SIZ980DT-T1-GE3
    • Manufacturer No：
      SIZ980DT-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SIZ980DT-T1-GE3
    • SKU：
      418244
    • Description：
      MOSFET 30V Dual N-Channel

    User Guide

    User Guide

    SIZ980DT-T1-GE3 Details

    MOSFET 30V Dual N-Channel

    SIZ980DT-T1-GE3 Specification Parameters

    • Part Status: Active
    • Number of Elements: 2
    • Packaging: Tape & Reel (TR)
    • RoHS Status: Non-RoHS Compliant
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 6
    • Factory Lead Time: 14 Weeks
    • FET Feature: Standard
    • DS Breakdown Voltage-Min: 30V
    • Drain Current-Max (Abs) (ID): 20A
    • Transistor Application: SWITCHING
    • JESD-30 Code: R-PDSO-N6
    • Pulsed Drain Current-Max (IDM): 90A
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Case Connection: DRAIN SOURCE
    • Drain-source On Resistance-Max: 0.0067Ohm
    • Current - Continuous Drain (Id) @ 25°C: 20A Tc 60A Tc
    • Power - Max: 20W 66W
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Reach Compliance Code: unknown
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • Terminal Form: NO LEAD
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Series: TrenchFET?
    • Package / Case: 8-PowerWDFN
    • Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
    • FET Type: 2 N-Channel (Dual), Schottky
    • Avalanche Energy Rating (Eas): 11.2 mJ
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