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- Manufacturer No：SQJ158EP-T1_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQJ158EP-T1_GE3
- SKU：369031
- Description：Automotive N-Channel 60 V (D-S) 175 °C MOSFET
User Guide
User Guide
SQJ158EP-T1_GE3 Details
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQJ158EP-T1_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 4
- Drain to Source Breakdown Voltage: 60V
- Max Junction Temperature (Tj): 175°C
- Terminal Position: SINGLE
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 22 ns
- JESD-30 Code: R-PSSO-G4
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Power Dissipation-Max: 45W Tc
- Current - Continuous Drain (Id) @ 25°C: 23A Tc
- Height: 1.267mm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Reach Compliance Code: unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 23A
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 80A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Power Dissipation: 45W
- Package / Case: PowerPAK? SO-8
- Series: Automotive, AEC-Q101, TrenchFET?
- Drain-source On Resistance-Max: 0.033Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Rds On (Max) @ Id, Vgs: 33m Ω @ 7A, 10V
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