SQP60N06-15_GE3Vishay Siliconix
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    SQP60N06-15_GE3123
    • Manufacturer No：
      SQP60N06-15_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      396424
    • Description：
      MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified
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    SQP60N06-15_GE3
    • Manufacturer No：
      SQP60N06-15_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SQP60N06-15_GE3
    • SKU：
      396424
    • Description：
      MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

    User Guide

    User Guide

    SQP60N06-15_GE3 Details

    MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

    SQP60N06-15_GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • RoHS Status: Non-RoHS Compliant
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • DS Breakdown Voltage-Min: 60V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JESD-30 Code: R-PSFM-T3
    • Vgs(th) (Max) @ Id: 3.5V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Pulsed Drain Current-Max (IDM): 190A
    • Current - Continuous Drain (Id) @ 25°C: 56A Tc
    • Rds On (Max) @ Id, Vgs: 15m Ω @ 30A, 10V
    • Surface Mount: NO
    • Mounting Type: Through Hole
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 12 Weeks
    • Drain to Source Voltage (Vdss): 60V
    • Reach Compliance Code: unknown
    • Transistor Element Material: SILICON
    • Packaging: Cut Tape (CT)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Drain Current-Max (Abs) (ID): 56A
    • Series: Automotive, AEC-Q101, TrenchFET?
    • Drain-source On Resistance-Max: 0.015Ohm
    • Power Dissipation-Max: 107W Tc
    • Avalanche Energy Rating (Eas): 42 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
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