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SUD40N08-16-E3123
  • Manufacturer No:
    SUD40N08-16-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    372564
  • Description:
    MOSFET N-CH 80V 40A TO252
  • Quantity:
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Inventory:7574
  • Qty Unit Price price
  • 1 $490.127 $490.127
  • 10 $485.274 $4852.74
  • 100 $480.469 $48046.9
  • 1000 $475.711 $475711
  • 10000 $471 $4710000

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SUD40N08-16-E3
  • Manufacturer No:
    SUD40N08-16-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SUD40N08-16-E3
  • SKU:
    372564
  • Description:
    MOSFET N-CH 80V 40A TO252

SUD40N08-16-E3 Details

MOSFET N-CH 80V 40A TO252

SUD40N08-16-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Time@Peak Reflow Temperature-Max (s): 20
  • Published: 2009
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Power Dissipation: 3W
  • Height: 2.39mm
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Dual Supply Voltage: 80V
  • Continuous Drain Current (ID): 40A
  • Case Connection: DRAIN
  • Length: 6.73mm
  • Fall Time (Typ): 10 ns
  • Turn-Off Delay Time: 25 ns
  • Turn On Delay Time: 12 ns
  • Series: TrenchFET?
  • Nominal Vgs: 4 V
  • Rise Time: 52 ns
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Threshold Voltage: 2V
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Drain to Source Breakdown Voltage: 80V
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Pulsed Drain Current-Max (IDM): 60A
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 6.22mm
  • Resistance: 16mOhm
  • Weight: 1.437803g
  • Current - Continuous Drain (Id) @ 25°C: 40A Tc
  • Power Dissipation-Max: 3W Ta 136W Tc
  • Rds On (Max) @ Id, Vgs: 16m Ω @ 40A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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