SUM110N06-3M9H-E3Vishay Siliconix
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    SUM110N06-3M9H-E3123
    • Manufacturer No：
      SUM110N06-3M9H-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      366277
    • Description：
      MOSFET N-CH 60V 110A D2PAK
    • Quantity：
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    Inventory:47
    • Qty Unit Price price
    • 1 $6.668 $6.668
    • 10 $6.601 $66.01
    • 100 $6.535 $653.5
    • 1000 $6.47 $6470
    • 10000 $6.405 $64050

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    SUM110N06-3M9H-E3
    • Manufacturer No：
      SUM110N06-3M9H-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUM110N06-3M9H-E3
    • SKU：
      366277
    • Description：
      MOSFET N-CH 60V 110A D2PAK

    User Guide

    User Guide

    SUM110N06-3M9H-E3 Details

    MOSFET N-CH 60V 110A D2PAK

    SUM110N06-3M9H-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 40V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Threshold Voltage: 3.4V
    • Turn-Off Delay Time: 75 ns
    • Width: 9.65mm
    • Series: TrenchFET?
    • Rise Time: 160 ns
    • Weight: 1.437803g
    • Pulsed Drain Current-Max (IDM): 440A
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Power Dissipation-Max: 3.75W Ta 375W Tc
    • Rds On (Max) @ Id, Vgs: 3.9m Ω @ 30A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Drain to Source Voltage (Vdss): 60V
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Height: 4.83mm
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Length: 10.67mm
    • Turn On Delay Time: 45 ns
    • Fall Time (Typ): 14 ns
    • Continuous Drain Current (ID): 110A
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Power Dissipation: 375W
    • Current - Continuous Drain (Id) @ 25°C: 110A Tc
    • Avalanche Energy Rating (Eas): 245 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
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