SUP40N25-60-E3Vishay Siliconix
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    SUP40N25-60-E3123
    • Manufacturer No：
      SUP40N25-60-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      390262
    • Description：
      Trans MOSFET N-CH 250V 40A 3-Pin(3+Tab) TO-220AB
    • Quantity：
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    Inventory:475
    • Qty Unit Price price
    • 1 $5.038 $5.038
    • 10 $4.988 $49.88
    • 100 $4.938 $493.8
    • 1000 $4.889 $4889
    • 10000 $4.84 $48400

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    SUP40N25-60-E3
    • Manufacturer No：
      SUP40N25-60-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUP40N25-60-E3
    • SKU：
      390262
    • Description：
      Trans MOSFET N-CH 250V 40A 3-Pin(3+Tab) TO-220AB

    User Guide

    User Guide

    SUP40N25-60-E3 Details

    Trans MOSFET N-CH 250V 40A 3-Pin(3+Tab) TO-220AB

    SUP40N25-60-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Terminations: 3
    • Pin Count: 3
    • Drain to Source Breakdown Voltage: 250V
    • Published: 2008
    • Element Configuration: Single
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Continuous Drain Current (ID): 40A
    • Width: 4.7mm
    • JEDEC-95 Code: TO-220AB
    • Vgs (Max): ±30V
    • Pulsed Drain Current-Max (IDM): 70A
    • Series: TrenchFET?
    • Weight: 6.000006g
    • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
    • Fall Time (Typ): 145 ns
    • Current - Continuous Drain (Id) @ 25°C: 40A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Power Dissipation-Max: 3.75W Ta 300W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Turn-Off Delay Time: 40 ns
    • Turn On Delay Time: 22 ns
    • Length: 10.41mm
    • Power Dissipation: 3.75W
    • Rise Time: 220 ns
    • Drain-source On Resistance-Max: 0.06Ohm
    • Height: 9.01mm
    • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
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