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SUP85N10-10P-GE3123
  • Manufacturer No:
    SUP85N10-10P-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    400002
  • Description:
    MOSFET N-CH 100V 85A TO220AB
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SUP85N10-10P-GE3
  • Manufacturer No:
    SUP85N10-10P-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SUP85N10-10P-GE3
  • SKU:
    400002
  • Description:
    MOSFET N-CH 100V 85A TO220AB

SUP85N10-10P-GE3 Details

MOSFET N-CH 100V 85A TO220AB

SUP85N10-10P-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code: TO-220AB
  • Turn On Delay Time: 15 ns
  • Rise Time: 12ns
  • Nominal Vgs: 3 V
  • Pulsed Drain Current-Max (IDM): 240A
  • Vgs(th) (Max) @ Id: 4.5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 85A Tc
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Terminations: 3
  • Pin Count: 3
  • Published: 2010
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Turn-Off Delay Time: 25 ns
  • Fall Time (Typ): 8 ns
  • Series: TrenchFET?
  • Continuous Drain Current (ID): 85A
  • Power Dissipation: 3.75W
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Rds On (Max) @ Id, Vgs: 10m Ω @ 20A, 10V

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Excellent

Based on reviews

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